| PART |
Description |
Maker |
| 1MBI200U4H-120L-50 |
IGBT MODULE (U series) 1200V / 200A / 1 in one package
|
Fuji Electric
|
| 2MBI200VA-060-50 |
IGBT MODULE (V series) 600V / 200A / 2 in one package
|
Fuji Electric
|
| ST180S12P0 ST180S12P0V ST180S12P1 ST180S12P1V ST18 |
From old datasheet system
PHASE CONTROL THYRISTORS
1800V 200A Phase Control SCR in a TO-209AB (TO-93C) package
1200V 200A Phase Control SCR in a TO-209AB (TO-93) package
1600V 200A Phase Control SCR in a TO-209AB (TO-93C) package
2000V 200A Phase Control SCR in a TO-209AB (TO-93C) package
|
IRF[International Rectifier]
|
| 3AP8-R 3AG1-R 3AG200-R 3AG2.5-R 3AG1.25-R AG400-R |
Fuses, RoHS 8A 250V FAST GLASS FAST BLOW ELECTRIC FUSE, 8A, 250VAC, 200A (IR), THROUGH HOLE
Fuses, RoHS 1A 250V FAST GLASS FAST BLOW ELECTRIC FUSE, 1A, 250VAC, 200A (IR), INLINE/HOLDER
Fuses, RoHS 200mA 250V FAST GLASS FAST BLOW ELECTRIC FUSE, 0.2A, 250VAC, 200A (IR), INLINE/HOLDER
Fuses, RoHS 2.5A 250V FAST GLASS
Fuses, RoHS 1.25A 250V FAST GLASS
Fast Blow Fuse Series
FAST BLOW ELECTRIC FUSE, 0.4A, 250VAC, 200A (IR), INLINE/HOLDER
|
Bel Fuse, Inc.
Bel Fuse Inc.
|
| BUK438W-800A BUK438-800A BUK438-800B BUK438W-800B |
RECTIFIER BRIDGE 8A 100V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
RECTIFIER BRIDGE 8A 200V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE
PowerMOS transistor
|
NXP Semiconductors
Philips Semiconductors
|
| 209CNQ150 209CNQ 209CNQ135 |
SCHOTTKY RECTIFIER 肖特基整流器
135V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
150V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| PRHMB200A61 |
200A 600V
|
Nihon Inter Electronics Corporation
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 30PRA20 |
FRD - 3A 200A 90ns
|
ETC
NIEC[Nihon Inter Electronics Corporation]
|
| PD2018 |
DIODE MODULE - 200A/800V
|
Nihon Inter Electronics Corporation
|
| PD2008 |
200A Avg 800 Volts
|
Nihon Inter Electronics Corporation
|
| PDH20116 |
THYRISTOR MODULE 200A / 1600V
|
Nihon Inter Electronics Corporation
|
